Low-field galvanomagnetic transport in n-type gallium arsenide

Nag, B. R. ; Chattopadhyay, D. ; Dutta, G. M. (1972) Low-field galvanomagnetic transport in n-type gallium arsenide Physica Status Solidi A: Applied Research, 12 (2). pp. 533-537. ISSN 0031-8965

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.22...

Related URL: http://dx.doi.org/10.1002/pssa.2210120223

Abstract

An iterative technique for the solution of the Boltzmann equation in the presence of a magnetic field is presented. The temperature dependence of low-field Hall mobility and magnetoresistance coefficient of n-type gallium arsenide is studied in the temperature range 77 to 300 °K applying this technique. Polar-mode, deformation potential acoustic, and piezo-electric scattering processes are considered, and the results are compared with those obtained by other methods. Agreement of the Hall mobility with recent experiments is found to be satisfactory.

Item Type:Article
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ID Code:28720
Deposited On:15 Dec 2010 11:40
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