Mukherji, D. ; Nag, B. R. (1978) Electron tunnelling in semiconductor heterostructures Solid State Electronics, 21 (3). pp. 555-559. ISSN 0038-1101
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...
Related URL: http://dx.doi.org/10.1016/0038-1101(78)90026-6
Abstract
A theory of electron tunnelling in GaAs---Ga1-xAlxAs---GaAs heterostructures is presented. The theory takes into account the different non-parabolic energy dispersion relations in the two materials. Calculated values of allowed energy levels are also presented for structures used in earlier experiments. Results of optical absorption experiments are found to agree with theory within 1 meV, but the results of double-barrier tunnelling experiments differ from theory by a factor of about 1.5.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 28681 |
| Deposited On: | 15 Dec 2010 11:44 |
| Last Modified: | 08 Jun 2011 07:38 |
Repository Staff Only: item control page
