Basu, P. K. ; Bhattacharyya, Keya ; Nag, B. R. (1983) Mobility of two-dimensional electron gas in JFETS limited by polar-optic and impurity scattering Solid State Communications, 48 (11). pp. 981-984. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...
Related URL: http://dx.doi.org/10.1016/0038-1098(83)90544-6
Abstract
The theory of mobility of a two-dimentional electron gas in JFET structures limited by polar-optic phonon and impurity scattering is developed in this work. The energy level and the wave function of the lowest subband are obtained by a variational procedure. The mobility limited by polar-optic phonon scattering is obtained by solving the Boltzmann equation iteratively. The expression for the impurity scattering limited mobility is obtained by using the variational wave function. For numerical calculation, however, the electron gas is assumed to be strictly two-dimensional. It is found that for experimental range of impurity concentration in GaAs JFETs, impurity scattering is the dominant process even at 300K.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 28670 |
| Deposited On: | 15 Dec 2010 11:45 |
| Last Modified: | 08 Jun 2011 07:23 |
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