Hot carrier conduction, hall mobility and injection characteristics of p-type Ge

Abstract

Experimental conductivity and Hall voltage characteristics of a 32 Ω-cm p-type Ge sample for fields upto 2.5 kV/cm are presented. The contacts to the sample are non-injecting at low fields, but excess carriers are found to be injected at fields above 500 V/cm from the positive voltage end. The injected carriers are eliminated by the application of high transverse magnetic fields. The conductivity characteristics obtained from the initial part of the pulse are found to agree with those obtained by earlier workers. The Hall mobility characteristics obtained by applying high magnetic fields show a reduction with the electric field faster than that shown by the conductivity mobility. The injection density and injected carrier velocity are also obtained for different input currents. The carrier velocity is found to agree with that of holes calculated by using Herring's theory.