Nag, B. R. ; Paria, H. ; Basu, P. K. (1968) Hall mobility and carrier repopulation of n-type silicon at high electric fields Physics Letters A, 28 (3). pp. 202-203. ISSN 0375-9601
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/037596...
Related URL: http://dx.doi.org/10.1016/0375-9601(68)90201-6
Abstract
Experimentally obtained conductivity and Hall mobility characteristics of 5 ohm-cm n-type Si at room temperature for electric fields upto 10 kV/cm applied along the <111> and <100> directions are presented. The results are also used to estimate the carrier population in different valleys for electric field applied along the <100> direction.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 28650 |
| Deposited On: | 15 Dec 2010 11:46 |
| Last Modified: | 08 Jun 2011 09:00 |
Repository Staff Only: item control page
