High-field autocovariance coefficient, diffusion coefficient and noise in InGaAs at 300 K

Nag, B. R. ; Ahmed, S. R. ; Deb Roy, M. (1987) High-field autocovariance coefficient, diffusion coefficient and noise in InGaAs at 300 K Solid State Electronics, 30 (2). pp. 235-239. ISSN 0038-1101

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...

Related URL: http://dx.doi.org/10.1016/0038-1101(87)90156-0

Abstract

Electron diffusivity in In(0.53)Ga(0.47)As is calculated by the Monte-Carlo method. The auto-covariance coefficient and correlation time of velocity fluctuations, frequency dependence of diffusion coefficient and figure of merit for noise are studied. The results indicate that the limiting frequency of operation and noise in In(0.53)Ga(0.47)As Gunn diodes would be comparable to those of GaAs diodes.

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