Hot-carrier D.C. conduction in elemental semiconductors

Abstract

Hot carrier d.c. conduction characteristics of the elemental semiconductors, germanium and silicon, are reviewed. The experimental results on the conduction and anisotropy characteristics have been collected from different sources and compared to determine the consistency of the data. The general features of the results are then described. The principles and basic assumptions on which the theories of hot carrier conduction have been developed are outlined. The experimental results are then examined in the light of the theories and the agreements and discrepancies are pointed out. Some studies which are required for the clarification and the elucidation of the results are also suggested.