Chattopadhyay, D. ; Nag, B. R. (1974) Mobility of electrons in Hg1-xCdxTe Journal of Applied Physics, 45 (3). pp. 1463-1465. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v45/i3/p1463_...
Related URL: http://dx.doi.org/10.1063/1.1663435
Abstract
Electron mobility in semiconducting Hg1-xCdxTe at room temperature has been calculated in the range 0.2 ≤ x ≤ 1.0 by an iterative solution of the Boltzmann equation incorporating the two-mode nature of the polar optical scattering and the nonparabolicity of the conduction band. The effects of the deformation potential acoustic, ionized impurity, and electron-hole scattering have also been considered. The calculated results agree with the measured values to within a factor of 2 for x = 0.6 and 0.4, whereas for x = 0.2, 0.8, and 1.0 the agreement is within a factor of 1.4.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 28610 |
| Deposited On: | 15 Dec 2010 11:49 |
| Last Modified: | 08 Jun 2011 08:37 |
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