Room-temperature magnetoresistance of n-type Si at high electric field

Basu, P. K. ; Paria, H. ; Nag, B. R. (1969) Room-temperature magnetoresistance of n-type Si at high electric field Journal of Physics D: Applied Physics, 2 (8). pp. 1183-1185. ISSN 0022-3727

Full text not available from this repository.

Official URL: http://iopscience.iop.org/0022-3727/2/8/422

Related URL: http://dx.doi.org/10.1088/0022-3727/2/8/422

Abstract

Experimentally observed values of room-temperature magnetoresistance of 5 Ωcm n-type Si are presented, for electric fields up to 3 kv cm-1 applied along <100> and <111> directions, and the results are discussed.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics Publishing.
ID Code:28569
Deposited On:15 Dec 2010 11:53
Last Modified:08 Jun 2011 08:58

Repository Staff Only: item control page