Basu, P. K. ; Nag, B. R. (1971) High-field Hall mobility on n-type silicon including the effect of magnetic field on the carrier distribution function Journal of Physics C: Solid State Physics, 4 (1). pp. 44-46. ISSN 0022-3719
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Official URL: http://iopscience.iop.org/0022-3719/4/1/007
Related URL: http://dx.doi.org/10.1088/0022-3719/4/1/007
Abstract
High-field Hall mobility of n-type silicon has been calculated, taking into account the effect of magnetic field on carrier temperature in the valleys. The discrepancy between theory and experiment is enhanced by considering this effect. It is concluded that the assumption of a Maxwellian distribution function and the available model of intervalley scattering in silicon cannot explain the experimental Hall mobility results.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 28567 |
| Deposited On: | 15 Dec 2010 11:53 |
| Last Modified: | 08 Jun 2011 08:52 |
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