Chattopadhyay, D. ; Nag, B. R. (1978) Effect of ionised impurity scattering on hot-electron diffusion in silicon Journal of Physics C: Solid State Physics, 11 (10). pp. 2055-2059. ISSN 0022-3719
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Official URL: http://iopscience.iop.org/0022-3719/11/10/015
Related URL: http://dx.doi.org/10.1088/0022-3719/11/10/015
Abstract
The electric field variation of the diffusivity in n-type silicon at 300K is studied theoretically for different impurity densities (Ni) in the range 1014 to 1018 cm-3. Increasing Ni makes the parallel diffusion constant weakly field-dependent for high values (1017-1018 cm-3) of Ni.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 28561 |
| Deposited On: | 15 Dec 2010 11:53 |
| Last Modified: | 08 Jun 2011 07:38 |
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