Bose, D. ; Nag, B. R. (1991) Electron velocity in indium phosphide single-heterojunction quantum wells Semiconductor Science and Technology, 6 (12). pp. 1135-1140. ISSN 0268-1242
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Official URL: http://iopscience.iop.org/0268-1242/6/12/006
Related URL: http://dx.doi.org/10.1088/0268-1242/6/12/006
Abstract
The velocity-field characteristic is calculated for a single-heterojunction InP well which may be realized by using GaxAl1-xAsySb1-y as the barrier layer. The characteristic is determined by the Monte Carlo method for the temperatures of 300 K and 77 K. Characteristics of GaAs and Ga0.47In0.53As are also computed and compared with earlier calculations and the calculated characteristics of InP. The peak electron velocity in InP is found to be about the same as in Ga0.47In0.53As or GaAs. The threshold field for intervalley transfer is, however, larger by a factor of 2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 28557 |
| Deposited On: | 15 Dec 2010 11:54 |
| Last Modified: | 08 Jun 2011 07:11 |
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