Basu, P. K. ; Nag, B. R. (1970) Room-temperature conductivity anisotropy and population redistribution in n-type silicon at high electric fields Physical Review B, 1 (2). pp. 627-631. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.1.627
Related URL: http://dx.doi.org/10.1103/PhysRevB.1.627
Abstract
Theoretical expressions have been derived for the high-field mobility of carriers in n-type Si for any arbitrary direction of field. The distribution function of the electrons in a valley has been assumed to be Maxwellian, and scattering by intravalley acoustic and two types of intervalley phonons have been considered. The conductivity anisotropy for room temperature obtained from theory is of the same order as found experimentally. The population ratio is, however, found to be in disagreement with the values obtained from the analysis of experimental results. A plausible explanation for this disagreement is also presented.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28546 |
| Deposited On: | 15 Dec 2010 11:55 |
| Last Modified: | 08 Jun 2011 08:55 |
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