Mukhopadhyay, D. ; Nag, B. R. (1971) Carrier repopulation from infrared Faraday rotation under hot-carrier conditions Physical Review B, 3 (2). pp. 360-364. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.3.360
Related URL: http://dx.doi.org/10.1103/PhysRevB.3.360
Abstract
The magnitude of the Faraday rotation in Ge and Si under hot-electron conditions has been estimated for different orientations of the magnetic and the hot-electron dc field. The possibility of the evaluation of carrier repopulation from the analysis of Faraday-rotation data is discussed. The conditions required for a successful experiment for the application of the method are examined. It is found that the experiment is possible at room temperature, but the conditions are more favorable at liquid-nitrogen or lower temperatures.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28545 |
| Deposited On: | 15 Dec 2010 11:55 |
| Last Modified: | 08 Jun 2011 08:52 |
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