Chattopadhyay, D. ; Nag, B. R. (1971) High-field hall factor of n-Ge at 200°K Physical Review B, 4 (4). pp. 1220-1223. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.4.1220
Related URL: http://dx.doi.org/10.1103/PhysRevB.4.1220
Abstract
The high-field Hall factor of n-type germanium at 200 °K has been theoretically calculated including the effect of carrier scattering into the >100< minima and that of the magnetic field dependence of the carrier temperature and population in the different valleys. The results calculated with the optical-phonon deformation-potential constant D0=0.4×109 eV cm-1 differ widely from the experimental values. Good agreement between theory and experiment is obtained for values of D0 lying within 1 × 109 and 1.5 × 109 eV cm-1.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28544 |
| Deposited On: | 15 Dec 2010 11:55 |
| Last Modified: | 08 Jun 2011 08:49 |
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