Basu, P. K. ; Nag, B. R. (1972) Intervalley scattering mechanism in silicon Physical Review B, 5 (4). pp. 1633-1635. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.5.1633
Related URL: http://dx.doi.org/10.1103/PhysRevB.5.1633
Abstract
The scattering mechanism in n-Si is discussed in the light of recent works of Folland and of Costato and Reggiani. The temperature variation of the mobility can be explained by using both these models, but the agreement with the Hall and magnetoresistance coefficients is not satisfactory. The same comment applies to the models suggested by Dumke and by Onton. The piezoresistance value calculated with these models is also found to be higher than the experimental value.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28543 |
| Deposited On: | 15 Dec 2010 11:55 |
| Last Modified: | 08 Jun 2011 08:50 |
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