Mukherji, D. ; Nag, B. R. (1980) Transverse electron effective mass in a semiconductor superlattice Physical Review B, 21 (12). pp. 5857-5859. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.21.5857
Related URL: http://dx.doi.org/10.1103/PhysRevB.21.5857
Abstract
An analytical expression involving the electron effective mass in the transverse direction has been obtained for a semiconductor superlattice. Numerical results presented indicate that the transverse mass depends on electron energy, and in most cases has a value close to the energy-dependent electron effective mass in the layer having the smaller band gap.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28537 |
| Deposited On: | 15 Dec 2010 11:56 |
| Last Modified: | 08 Jun 2011 07:34 |
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