Mukhopadhyay, Sanghamitra ; Nag, B. R. (1993) Intrinsic electron mobility in narrow Ga0.47In0.53As quantum wells Physical Review B, 48 (24). pp. 17960-17966. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.48.17960
Related URL: http://dx.doi.org/10.1103/PhysRevB.48.17960
Abstract
Electron mobility in Ga0.47In0.53As quantum wells is calculated for well widths between 2 and 10 nm and for the temperatures of 4.2, 77, and 300 K. Effects of the finite barrier height, energy-band nonparabolicity, mode confinement, electron screening, and degeneracy have been taken into account. The calculated values are found to be close to the experimental results for a well width of 10 nm. Effects of the composition of the barrier layer are also discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28533 |
| Deposited On: | 15 Dec 2010 11:56 |
| Last Modified: | 08 Jun 2011 07:08 |
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