Kundaliya, Darshan C. ; Ogale, S. B. ; Dhar, S. ; McDonald, K. F. ; Knoesel, E. ; Osedach, T. ; Lofland, S. E. ; Shinde, S. R. ; Venkatesan, T. (2006) Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon Journal of Magnetism and Magnetic Materials, 299 (2). pp. 307-311. ISSN 0304-8853
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S03048...
Related URL: http://dx.doi.org/10.1016/j.jmmm.2005.04.017
Abstract
Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (Tc~215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15°in the ferromagnetic state.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Thin Films; GaFeO3; Moke; Pulsed Laser Deposition; Magnetization |
ID Code: | 26922 |
Deposited On: | 08 Dec 2010 13:03 |
Last Modified: | 17 May 2016 10:12 |
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