Kamal, Jyoti ; Sharma, Satish ; Kaw, Predhiman (1970) Thermoelectric effect of hot carriers in semiconductors with nonparabolic energy bands Journal of Applied Physics, 41 (5). pp. 2241-2243. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v41/i5/p2241_...
Related URL: http://dx.doi.org/10.1063/1.1659194
Abstract
An analytical investigation of the thermoelectric effect of hot carriers in semiconductors with non-parabolic energy bands and spherical energy surfaces has been carried out. The analysis is good for moderately high intensities of the applied electric field. Some numerical results, particularly applicable to indium arsenide and indium antimonide, are presented at the end.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 25082 |
| Deposited On: | 01 Dec 2010 12:10 |
| Last Modified: | 04 Jun 2011 06:22 |
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