Akhtar, Dilshad ; Vankar, V. D. ; Goel, T. C. ; Chopra, K. L. (1979) Splat-quenching of lead in vacuum Journal of Materials Science, 14 (4). pp. 983-987. ISSN 0022-2461
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Official URL: http://www.springerlink.com/content/g550889202223l...
Related URL: http://dx.doi.org/10.1007/BF00550731
Abstract
A "gun" assembly for splat-quenching of materials in vacuum or controlled ambients has been set up. A metastable h c p structure (a=3.48 Å, c=5.59 Å, c/a=1.60) has been observed in splat quenched pure lead. The h c p phase is stable up to 270° C and transforms to the equilibrium f c c structure on heating in the electron microscope. The transformation has also been confirmed by DTA. The observed h c p structure appears to be stabilized by traces of oxygen as well as a high rate (∼108 K sec-1) of cooling. No such structure has been observed in vapour-quenched films under similar conditions.
Item Type: | Article |
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Source: | Copyright of this article belongs to Springer-Verlag. |
ID Code: | 23262 |
Deposited On: | 25 Nov 2010 09:33 |
Last Modified: | 28 May 2011 08:57 |
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