Electron transport properties of Cu-based alloy films

Abstract

The resistivity (ρ), Hall coefficient (R_H), temperature coefficient of resistance (TCR), and mobility (μ) of Cu-based alloy films containing 1, 2, and 5 at.% of Al, Ge, and Sn, in the temperature range 80-600 K, have been investigated. The resistivity increases linearly (and the TCR decreases correspondingly) with concentration of the impurities in accordance with Matthiessen's rule. The magnitude as well as the temperature dependence of R_H and μ decrease on addition of impurities. At a concentration of 5-at.% Ge and Sn, the temperature dependence of R_H is reversed. The addition of 5-at.% Al makes R_H independent of temperature. The observed electron transport properties have been explained in terms of scattering behavior of electron and hole states in a mixed conduction mechanism, and distortions in the Fermi surface.