Asoka Kumar, P. S. ; Panda, B. ; Ray, S. K. ; Mathur, B. K. ; Bhattacharya, D. ; Chopra, K. L. (1996) Effect of electrode microstructure on leakage current in lead-lanthanum-zirconate-titanate multilayer capacitors Applied Physics Letters, 68 (10). pp. 1344-1346. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v68/i10/p1344...
Related URL: http://dx.doi.org/10.1063/1.115929
Abstract
Lead-lanthanum-zirconate-titanate (PLZT) multilayer capacitors involving platinum bottom electrodes have been fabricated on a silicon nitride/silicon (SiN/Si) substrate system. Leakage current characteristics show strong dependence on the processing temperature of the bottom electrode. A drop in leakage current by five orders of magnitude has been observed for capacitor with platinum electrode deposited at room temperature. Scanning tunneling microscopy (STM) studies reveal significant differences in the microstructure of platinum films deposited at different substrate temperatures. Based on STM results, a correlation between the microstructure of the bottom electrode, space layer at PLZT/Pt interface, and the nucleation of PLZT has been suggested to explain this new observation.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Capacitors; Electrodes; Interface Structure; Lanthanum Compounds; Leakage Current; Microstructure; MIM Junctions; PZT; STM |
| ID Code: | 23206 |
| Deposited On: | 25 Nov 2010 13:19 |
| Last Modified: | 28 May 2011 04:25 |
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