Singh, Bhanwar ; Rajagopalan, S. ; Chopra, K. L. (1980) Photoinduced chemical changes in obliquely deposited amorphous Se‐Ge films Journal of Applied Physics, 51 (3). pp. 1768-1772. ISSN 0021-8979
Full text not available from this repository.
Official URL: http://jap.aip.org/resource/1/japiau/v51/i3/p1768_...
Related URL: http://dx.doi.org/10.1063/1.327737
Abstract
A large photoinduced change in the chemical solubility of obliquely deposited a‐Se1−xGex films has been observed. The effect is a function of composition of the film, angle of deposition (obliqueness), annealing, exposure kinetics, and temperature of etching solution. The occurrence of large photochemical effects in obliquely deposited films is related to the creation of metastable defect centers on illumination. The effect has been utilized to obtain micron‐resolution photolithographic patterns.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 23174 |
| Deposited On: | 25 Nov 2010 13:22 |
| Last Modified: | 28 May 2011 06:52 |
Repository Staff Only: item control page
