Electrochemical adsorption of metals on amorphous Se-Ge films

Abstract

Electrochemical adsorption of Ag and Cu on a-Se_1-xGe_x films has been studied as a function of the composition of the films, angle of deposition (obliqueness), film thickness, pre-illumination of the films and temperature of the electrolytic solution. Metal adsorption is due to the oxidation of germanium atoms by the metal ions present in the electrolyte. Its enhancement with obliwueness (angle of deposition f the film) arises due to increased surface defect sites/dangling bonds associated with the Ge atoms. Adsoprtion decreases for pre-illuminated a-Se_1-xGe_x films, presumably as a result of changes in the surface topography arising from structural rearrangements of the defect centers.