Sastry, O. S. ; Dutta, V. ; Mukerjee, A. K. ; Chopra, K. L. (1985) Defect analysis in polycrystalline silicon solar cells Journal of Applied Physics, 57 (12). pp. 5506-5511. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v57/i12/p5506...
Related URL: http://dx.doi.org/10.1063/1.334828
Abstract
Localized bulk defects like diffusion length variations and structural defects like grain boundaries are analyzed in polycrystalline silicon solar cells using laser scanning and deep level transient spectroscopy techniques. The effect of hydrogen passivation on the role of grain boundaries has been studied.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 23166 |
| Deposited On: | 25 Nov 2010 13:22 |
| Last Modified: | 28 May 2011 05:14 |
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