Gupta, P. K. ; Chopra, K. L. (1987) Plasma-processed Ag/P4Se10 (80° deposited) films as a negative resist Journal of Applied Physics, 62 (10). pp. 4303-4305. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v62/i10/p4303...
Related URL: http://dx.doi.org/10.1063/1.339109
Abstract
Lithographic properties of Ag/P4Se10 (80° deposited) films exposed to photons and glow-discharge hydrogen plasma have been investigated. It has been observed that the etching rate of the exposed film is lower compared to the unexposed one, giving rise to a negative tone behavior of the material. The effect of exposure time on the etching rate and selectivity ratio has been studied. The contrast (γ) values obtained for the photoexposed and plasma-exposed negative resists are 2.9 and 5.1, respectively, with a photosensitivity of ~1021 photons/cm2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 23164 |
| Deposited On: | 25 Nov 2010 13:23 |
| Last Modified: | 28 May 2011 05:04 |
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