Rastogi, R. S. ; Vankar, V. D. ; Chopra, K. L. (1990) Interaction of amorphous MoNix alloys with silicon Journal of Applied Physics, 67 (4). pp. 1868-1873. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v67/i4/p1868_...
Related URL: http://dx.doi.org/10.1063/1.345615
Abstract
The interaction of amorphous MoNix alloys with silicon has been investigated by glancing-angle x-ray diffraction, Auger-electron spectroscopy, and sheet-resistance measurements in the temperature range 500-700°C. Mo-rich alloys (Mo80Ni20 and Mo65Ni35) were found to react with silicon at ∼550°C while nickel-rich alloys (Mo32Ni68) react at ∼500°C to form silicides. In Mo-rich alloys, the initial reaction occurs due to out-diffusion of nickel from the alloy and in-diffusion of silicon into the alloy, while in nickel-rich alloys the initial reaction occurs due to out-diffusion of nickel only. In the initial phase of the reaction, a mixture of several crystalline phases of molybdenum and molybdenum and nickel silicides is observed. At higher temperature, however, a two-layer structure MoSi2 +NiSi(NiSi2)/ NiSi(NiSi2)/ Si(100) is formed in both cases.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Molybdenum Alloys; Nickel Alloys; Silicon; Amorphous State; X−Ray Diffraction; Auger Electron Spectroscopy; Electric Conductivity; High Temperature; Nicel; Diffusion; Crystalizzation; Layers; Atom Transport |
ID Code: | 23160 |
Deposited On: | 25 Nov 2010 13:23 |
Last Modified: | 28 May 2011 04:46 |
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