Rastogi, R. S. ; Vankar, V. D. ; Chopra, K. L. (1990) Solid phase reaction of molybdenum-nickel alloy thin films with silicon Journal of Applied Physics, 67 (10). pp. 6269-6273. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v67/i10/p6269...
Related URL: http://dx.doi.org/10.1063/1.345143
Abstract
Solid phase reaction behavior of polycrystalline and amorphous alloys of MoNix (x=12, 20, and 88) with silicon in the temperature range 500-700°C has been studied by glancing angle X-ray diffraction and Auger electron spectroscopy techniques. Two types of reaction mechanisms are observed in these alloy/silicon reactions and both are controlled by the composition of the refractory metal component. In molybdenum-rich polycrystalline alloy (Mo88Ni12) the reaction at 500°C occurs due to out-diffusion of nickel from the alloy, while at 550°C the reaction between the alloy and silicon mainly occurs due to in-diffusion of silicon. On the other hand, in nickel-rich alloy (Mo12Ni88), the reaction at 500°C is dominated by nickel out-diffusion. The amorphous alloy (Mo80Ni20) was found to be stable on silicon up to 500°C and a reaction at 550°C occurs due to crystallization followed by out-diffusion of nickel and large amounts of silicon in-diffusion. In all these alloy/silicon reactions, a macroscopic phase separation between MoSi2 and NiSi or NiSi2 is observed and results in a two-layer structure consisting of [MoSi2+NiSi(or NiSi2)]/NiSi (or NiSi2)/Si(100).
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
ID Code: | 23159 |
Deposited On: | 25 Nov 2010 13:23 |
Last Modified: | 28 May 2011 04:47 |
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