Kumar, Sunil ; Kashyap, Subhash C. ; Chopra, K. L. (1992) X-ray photoelectron spectroscopy studies of n-type bismuth-modified amorphous thin films of Ge20Se80 and As2Se3 Journal of Applied Physics, 72 (5). pp. 2066-2068. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v72/i5/p2066_...
Related URL: http://dx.doi.org/10.1063/1.351638
Abstract
The charged state of bismuth atoms in n-type bismuth-modified amorphous thin films of Ge20Se80 and As2Se3 has been studied by X-ray photoelectron spectroscopy. On the basis of the observed chemical shift, it is concluded that the Bi atoms in the modified films are positively charged. The charged Bi atoms perturb the equilibrium between positively and negatively charged defect centers, thereby causing a shift of the Fermi level towards the conduction band. The observed enhanced electrical conductivity and the conductivity conversion from p to n type in the modified films is the result of such a Fermi level shift.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Germanium Selenides; Arsenic Selenides; Amorphous Semiconductors; Photoelectron Spectroscopy; X Radiation; Thin Films; N−Type Conductors; Charge State; Bismuth Additions; Electric Conductivity |
| ID Code: | 23157 |
| Deposited On: | 25 Nov 2010 13:26 |
| Last Modified: | 28 May 2011 04:39 |
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