Synthesis of cubic boron nitride films by activated reactive evaporation of H3BO3

Chopra, K. L. ; Agarwal, Vandna ; Vankar, V. D. ; Deshpandey, C. V. ; Bunshah, R. F. (1985) Synthesis of cubic boron nitride films by activated reactive evaporation of H3BO3 Thin Solid Films, 126 (3-4). pp. 307-312. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(85)90325-6

Abstract

Hard cubic boron nitride films for wear-and-tear applications have been prepared by activated reactive evaporation of H3BO3 in the presence of an NH3 plasma. The plasma was created by electrons emitted from a resistively heated filament and an anode. It was enhanced by an external magnetic field (about 60 G). H3BO3 was evaporated from a molybdenum boat in NH3 at a pressure of 4.5× 10-2 Pa. The substrates were maintained at 450°C during evaporation and a typical rate of deposition of the boron nitride films was found to be 150 nm min-1. The films were characterized by electron diffraction, electron microscopy. Auger electron spectroscopy, IR spectra, optical reflectance and transmittance, microhardness and adhesion measurements. The f.c.c. phase of boron nitride was identified. The microstructure consisted of randomly oriented crystallites with an average grain size of 25 nm. Measurements of the reflectance R and the transmittance T suggest an optical gap of 3.64 eV. The films were found to be highly adherent and to have a microhardness of about 2128 kgf mm-2.

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