Observation of deviation of electronic behaviour of indium tin oxide film at grain boundary using Scanning Tunneling Microscope

Kasiviswanathan, S. ; Srinivas, V. ; Kar, A. K. ; Mathur, B. K. ; Chopra, K. L. (1997) Observation of deviation of electronic behaviour of indium tin oxide film at grain boundary using Scanning Tunneling Microscope Solid State Communications, 101 (11). pp. 831-834. ISSN 0038-1098

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...

Related URL: http://dx.doi.org/10.1016/S0038-1098(96)00684-9

Abstract

Scanning Tunneling Microscopy and Spectroscopy investigations have been carried out on electron beam deposited indium tin oxide films. The STM images reveal a rather smooth surface, which appears to have been formed due to the coalescence of islands with different shapes. The spectroscopic data, in general, exhibit characteristics typical of metal-insulator-semiconductor structures, with a heavily doped semiconductor. From the I-V curves, a band gap of ≈3.5 eV is obtained, which is very close to the bulk value. The I-V studies at some grain boundary interfaces suggest the presence of regions showing electronic characteristics, that differ significantly from what is observed on the rest of the film surface.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:23029
Deposited On:25 Nov 2010 13:40
Last Modified:28 May 2011 04:21

Repository Staff Only: item control page