Rastogi, R. S. ; Vankar, V. D. ; Chopra, K. L. (1988) Molybdenum disilicide formation by ion beam mixing and rapid thermal annealing of Mo/Si(111) Thin Solid Films, 164 . pp. 449-454. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...
Related URL: http://dx.doi.org/10.1016/0040-6090(88)90175-7
Abstract
MoSi2 films were prepared by rapid thermal annealing of P+-implanted Mo/Si(111) in the temperature range 600-1200 °C. The reaction and the crystallographic structure and surface morphology of the resultant films are discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 23028 |
| Deposited On: | 25 Nov 2010 13:40 |
| Last Modified: | 28 May 2011 04:52 |
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