Electrical resistivity and thermoelectric power of copper-germanium films

Abstract

Cu-Ge films over the whole composition range were prepared by the vapour quenching of the alloys onto glass substrates held at 300 K. The electrical resistivity, thermoelectric power and temperature dependence of the films were studied in the temperature range 100-500 K. The observed behaviour of the electrical resistivity and thermoelectric power is understandable on the basis of transmission electron microscopy and electron diffraction observations which indicate three structural regions. Up to 5 at.% Ge in copper the films are single phase with a structure similar to that of pure copper; in the range 5-80 at.% Ge in copper the films consist of a mixture of Cu₃Ge, copper and germanium; beyond 80 at.% the Cu-Ge films are single-phase amorphous.