Photo-optical changes in Ge-chalcogenide films

Abstract

The photoinduced shift in the optical absorption edge and changes in the optical constants and their dispersion in the vicinity of the absorption edge (2-5 eV) have been studied in obliquely deposited thin films of Ge-chalcogenides. The variation of photo-optical changes as a function of various deposition conditions and composition throws light on the role of built-in microstructure and the relevant physical parameters necessary for the occurrence of large photoeffects. The photoinduced optical changes in 80°-films are partly (≈33%) reversible. This (reversible) part is equal to the total (completely reversible) optical changes in 0°-films. The irreversible part (≈67%) has been attributed to the observed photoinduced volume changes. The reversible optical changes have been understood in terms of configurational distortion and modifications in the electronic energy band structure, near the band edges induced by band gap irradiation.