Malhotra, L. K. ; Harshavardhan, K. S. ; Chopra, K. L. (1984) Photoinduced changes in optical properties of obliquely deposited As2S3, As2Se3 and As-Se-Ge films Materials Chemistry and Physics, 11 (1). pp. 15-27. ISSN 0254-0584
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/025405...
Related URL: http://dx.doi.org/10.1016/0254-0584(84)90085-3
Abstract
Photoinduced changes in the absorption edge and refractive index of 0° and 80° angle-of-incidence deposited As2S3, As2Se3 and As-Se-Ge films have been investigated in the vicinity of the absorption edge. No appreciable effect of oblique deposition has been observed in As2X3 (X = S, Se). There are large irreversible changes, however, on exposure of As-Se-Ge films deposited at 80° incidence. The enhancement of photo-effects on addition of Ge in obliquely deposited films is primarily due to the large photoinduced volume changes.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 22963 |
Deposited On: | 25 Nov 2010 13:46 |
Last Modified: | 28 May 2011 05:15 |
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