Randhawa, H. S. ; Nath, P. ; Malhotra, L. K. ; Chopra, K. L. (1976) Structure of amorphous Ge alloy films Solid State Communications, 20 (1). pp. 73-76. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...
Related URL: http://dx.doi.org/10.1016/0038-1098(76)91702-6
Abstract
Structural details of amorphous alloy films of Ge with Al, Cu and Fe up to 30 at.% metal concentrations have been studied. As determined by the electron diffraction studies, the short range order in these alloy films is essentially similar to that of amorphous (a-)Ge films. Electron microscopy and electrical resistivity measurements show that the concentration of voids and associated dangling bonds in a-Ge is reduced considerably on alloying. It is concluded from these studies that the metal atoms are accommodated in the tetrahedral network of a-Ge.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 22952 |
| Deposited On: | 25 Nov 2010 13:47 |
| Last Modified: | 28 May 2011 09:51 |
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