Suri, Ritu ; Thakoor, A. P. ; Chopra, K. L. (1976) Anomalously large contributions of vacancies and dislocations to Hall coefficient and thermoelectric power of copper films Solid State Communications, 18 (5). pp. 605-608. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...
Related URL: http://dx.doi.org/10.1016/0038-1098(76)91492-7
Abstract
Effect of vacancies and dislocations on Hall coefficient (RH) and thermoelectric power (TEP) of copper films has been deduced from annealing behaviour of various transport properties. The large contributions of these defects may be attributed to variations in the density of hole-like states and/or the energy dependence of conductivity (at the Fermi surface), caused by changes in the extent and/or degree of curvature of the necks at Fermi surface.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 22947 |
Deposited On: | 25 Nov 2010 13:47 |
Last Modified: | 28 May 2011 09:54 |
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