Nath, P. ; Dutta, V. ; Chopra, K. L. (1979) Amorphous and polycrystalline Ge-metal films prepared by physical vapour deposition Thin Solid Films, 64 (1). pp. 65-69. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...
Related URL: http://dx.doi.org/10.1016/0040-6090(79)90545-5
Abstract
Amorphous and polycrystalline Ge-metal (aluminium, gallium, silver, gold, copper and iron) films with varying metal concentrations were prepared by codeposition onto glass or rocksalt substrates. Amorphous Ge-metal films were obtained by deposition onto substrates maintained at or below 300 K, whereas polycrystalline films were obtained by deposition onto substrates maintained at elevated temperatures ( > 700 K). The structural order, microstructure and structural stability of these films were established by transmission electron microscopy and electron diffraction. The structural and electrical properties of the amorphous Ge-metal films are consistent with the formation of homogeneous alloys and impurity states introduced on alloying. However, the formation of alloys and/or heterogeneous Ge-segregated metal/compound in crystalline Ge-metal films at high metal concentrations explains the observed behaviour.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 22946 |
Deposited On: | 25 Nov 2010 13:47 |
Last Modified: | 28 May 2011 08:45 |
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