Meyers, Marc A. ; Andrade, Umberto R. ; Chokshi, Atul Harish (1995) The effect of grain size on the high-strain, high-strain-rate behavior of copper Metallurgical and Materials Transactions A, 26 (11). pp. 2881-2893. ISSN 1073-5623
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Official URL: http://www.springerlink.com/content/j1045322672251...
Related URL: http://dx.doi.org/10.1007/BF02669646
Abstract
Copper with four widely differing grain sizes was subjected to high-strain-rate plastic deformation in a special experimental arrangement in which high shear strains of approximately 2 to 7 were generated. The adiabatic plastic deformation produced temperature rises in excess of 300 K, creating conditions favorable for dynamic recrystallization, with an attendant change in the mechanical response. Preshocking of the specimens to an amplitude of 50 GPa generated a high dislocation density; twinning was highly dependent on grain size, being profuse for the 117- and 315-μm grain-size specimens and virtually absent for the 9.5-μm grain-size specimens. This has a profound effect on the subsequent mechanical response of the specimens, with the smaller grain-size material undergoing considerably more hardening than the larger grain-size material. A rationale is proposed which leads to a prediction of the shock threshold stress for twinning as a function of grain size. The strain required for localization of plastic deformation was dependent on the combined grain size/shockinduced microstructure, with the large grain-size specimens localizing more readily. The experimental results obtained are rationalized in terms of dynamic recrystallization, and a constitutive equation is applied to the experimental results; it correctly predicts the earlier onset of localization for the large grain-size specimens. It is suggested that the grain-size dependence of shock response can significantly affect the performance of shaped charges.
Item Type: | Article |
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Source: | Copyright of this article belongs to Springer-Verlag. |
ID Code: | 22420 |
Deposited On: | 25 Nov 2010 14:04 |
Last Modified: | 05 Feb 2011 06:02 |
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