Krupanidhi, S. B. ; Mansingh, A. ; Sayer, M. (1983) I-V & C-V characteristics of ferroelectric lead germanate on silicon Ferroelectrics, 50 (1). pp. 117-122. ISSN 0015-0193
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Official URL: http://www.informaworld.com/smpp/content~db=all~co...
Related URL: http://dx.doi.org/10.1080/00150198308014440
Abstract
The ferroelectric properties of lead germanate film on silicon substrates seemed to be influenced by the nature of the interface. I-V studies revealed the formation of an iso-type n-n+ hetero - junction at low voltages, exhibiting two types of conduction: generation-recombination followed by tunneling. C-V studies show a hysteresis indicating a nonvolatile memory behavior.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Ltd. |
| ID Code: | 19408 |
| Deposited On: | 22 Nov 2010 12:38 |
| Last Modified: | 06 Jun 2011 11:40 |
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