Bhattacharyya, S. ; Krupanidhi, S. B. (2001) AC electrical property studies on SrBi2(Ta0.5,Nb0.5)2O9 thin films by excimer laser ablation Integrated Ferroelectrics, 32 (1-4). pp. 101-119. ISSN 1058-4587
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Related URL: http://dx.doi.org/10.1080/10584580108215682
Abstract
Thin films of SrBi2Nb2O9 (SBN) were grown using pulsed laser ablation. A low substrate temperature deposition was chosen to ensure good film substrate interface, and hence good ferroelectric property. A nearly polycrystalline structure was achieved after ex-situ annealing. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of thefilm at all. The hysteresis results showed an excellent square shaped loop with Pr=15 µ C/cm and Ec = 75 kV/cm respectively. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are in close agreement with dc values, and correspond to oxygen vacancy motion.
Item Type: | Article |
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Source: | Copyright of this article belongs to Taylor and Francis Ltd. |
Keywords: | PLD; Dielectric Properties; Erroelectrics |
ID Code: | 19289 |
Deposited On: | 23 Nov 2010 13:11 |
Last Modified: | 06 Jun 2011 08:27 |
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