Chakraborty, Pradip ; Krupanidhi, S. B. (2010) Polarization enhancement in compositionally graded vanadium doped bismuth titanate thin films Journal of Applied Physics, 107 (12). 124105_1-124105_4. ISSN 0021-8979
Full text not available from this repository.
Official URL: http://link.aip.org/link/?JAPIAU/107/124105/1
Related URL: http://dx.doi.org/10.1063/1.3431543
Abstract
Compositionally up and downgraded Bi4-x/3Ti3-xVxO12 (x=0.0,0.012,0.03,0.06) thin films were grown on Pt coated silicon substrates by pulsed laser deposition technique. Downgraded fabrication showed improved ferroelectric polarization in comparison to upgraded fabrication. Films deposited at 650 and 700° C showed very large remnant polarization (2Pr) value of 82 µC cm-2, which is comparatively large among all bismuth based thin films reported so far. A mechanism based on vanadium enrich seeded layer formation in the downgraded structure is proposed for the improvement. Moreover, frequency independent behavior (100Hz-5kHz) of the graded films ensures its potential application for various microelectronic devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 19271 |
| Deposited On: | 23 Nov 2010 13:13 |
| Last Modified: | 04 Jun 2011 10:30 |
Repository Staff Only: item control page
