Das, Rasmi R. ; Rodriguez, R. J. ; Katiyar, Ram S. ; Krupanidhi, S. B. (2001) CaBi2Ta2O9 ferroelectric thin films prepared by pulsed laser deposition Applied Physics Letters, 78 (19). pp. 2925-2927. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v78/i19/p2925...
Related URL: http://dx.doi.org/10.1063/1.1370545
Abstract
Thin films of CaBi2Ta2O9 (CBT) were deposited on Pt/TiO2/SiO2/Si substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700° C. The presence of (115) and (0010) orientations confirm the phase formation at the lower temperature (500° C). Microstructure evolution of CBT films with oxygen pressure of 100-200 mTorr at a substrate temperature of 650° C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650° C exhibited a maximum polarization of (2Pm) 17 µ C/cm2, remanent polarization of (2Pr) 8 µ C/cm2 and coercive field of (Ec) 128 kV/cm, with fatigue endurance up to 1010 switching cycles. The higher dielectric constant (~115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700° C) was explained by the increased grain size. The higher leakage current density (~10-7 A/cm2) at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
ID Code: | 19265 |
Deposited On: | 23 Nov 2010 13:14 |
Last Modified: | 06 Jun 2011 09:20 |
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