Breakdown characteristics of MOVPE grown Si-doped GaAs schottky diodes

Abstract

The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organic vapor-phase epitaxy grown Si-doped n-GaAs were measured in the doping range of 6×10¹⁵-1.5×10¹⁸ cm^-3. These results are compared with the experimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G. Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the measured data and the breakdown voltages by Sze and Gibbons in the high doping concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons. The breakdown voltage at higher doping concentration will be useful for the design and development of GaAs switching devices and the emitter-base region of bipolar transistors.