Krupanidhi, S. B. ; Maffei, N. ; Sayer, M. ; El-Assal, K. (1983) R.F. magnetron sputtering of ferroelectric PZT films Ferroelectrics, 51 (1). pp. 93-98. ISSN 0015-0193
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Official URL: http://www.informaworld.com/smpp/content~db=all~co...
Related URL: http://dx.doi.org/10.1080/00150198308009058
Abstract
Ferroelectric PZT films were fabricated using an R.F. planar magnetron sputtering technique with 100% oxygen as the sputtering medium. The effect of growth conditions such as substrate temperature, sputtering gas composition and sputtering pressure on rate of sputtering, dielectric constant and dc conductivity are reported. The stoichiometry was governed by the target composition. Post-deposition annealing of films improved all physical parameters. A clear dielectric transition around 350° C and a square polarization hysteresis loop was evidence for the ferroelectricity in the PZT films.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Ltd. |
| ID Code: | 19144 |
| Deposited On: | 23 Nov 2010 13:26 |
| Last Modified: | 06 Jun 2011 11:40 |
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