Temperature dependence on the response of inversion layer with zirconium titanate as oxide in MOS configuration

Abstract

Highly oriented and polycrystalline zirconium titanate thin films were deposited onto a p-type silicon substrate using laser ablation technique. Capacitance-voltage characteristics of metal-oxide semiconductor (MOS) capacitors were investigated in the temperature range between room temperature and 250° C for both the polycrystalline and highly oriented zirconium titanate thin films. The high frequency C-V curve has been measured at room temperature. There is a transition to low frequency C-V curve on supplying thermal energy to the MOS capacitor. A plot of the transition frequency versus reciprocal temperature shows an activation energy of n_i, which is dependent on the temperature and is equal to half of the silicon band gap energy. This indicates that the dominating mechanism is the generation-recombination of the minority carriers in the space charge region, related to bulk traps of silicon.