Field-induced dielectric properties of laser ablated antiferroelectric (Pb_0.99Nb_0.02)(Zr_0.57Sn_0.38Ti_0.05)_0.98O₃ thin films

Abstract

Niobium-modified lead zirconate stannate titanate antiferroelectric thin films with the chemical composition of (Pb_0.99Nb_0.02)(Zr_0.57Sn_0.38Ti_0.05)_0.98O₃ were deposited by pulsed excimer laser ablation technique on Pt-coated Si substrates. Field-induced phase transition from antiferroelectric to ferroelectric properties was studied at different fields as a function of temperature. The field forced ferroelectric phase transition was elucidated by the presence of double-polarization hysteresis and double-butterfly characteristics from polarization versus applied electric field and capacitance and voltage measurements, respectively. The measured forward and reverse switching fields were 25 kV/cm and 77 kV/cm, respectively. The measured dielectric constant and dissipation factor were 540 and 0.001 at 100 kHz, respectively, at room temperature.