Bhattacharyya, S. ; James, A. R. ; Krupanidhi, S. B. (1998) Role of growth conditions and Bi-content on the properties of SrBi2Ta2O9 thin films Solid State Communications, 108 (10). pp. 759-763. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/S0038-1098(98)00425-6
Abstract
Ex-situ and in-situ crystallised films of SrBi2Ta2O9 (SBT) were grown using pulsed laser ablation. Different growth parameters were used for ablation. Both low temperature grown films, followed by annealing and high temperature grown ones were used for comparison. It was found that in-situ crystallised films showed better electrical properties over the annealed films, vis-a-vis the hysteresis loops and dielectric constants. It was also observed that the Bi concentration (which was estimated by EDS analysis) had a marked influence on the ferroelectric properties. With stoichiometric or excess Bi content, growth of in-situ crystallised films resulted in the observation of square hysteresis loops with a Pr value of 10 µ C/cm2 and a coercive field of 24 kV/cm, which appears very attractive for NVRAM applications.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Ferroelectrics; Thin Films; B. Laser Processing; D. Dielectric Response |
| ID Code: | 19043 |
| Deposited On: | 25 Nov 2010 14:33 |
| Last Modified: | 06 Jun 2011 10:39 |
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