Antiferroelectric lead zirconate thin films by pulsed laser ablation

Bharadwaja, S. S. N. ; Krupanidhi, S. B. (1999) Antiferroelectric lead zirconate thin films by pulsed laser ablation Materials Science and Engineering: B, 64 (1). pp. 54-59. ISSN 0921-5107

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Lead Zirconate (PbZrO3) thin films were deposited by pulsed laser ablation method. Pseudocubic (110) oriented in-situ films were grown at low pressure. The field enforced anti-ferroelectric (AFE) to ferroelectric (FE) phase transformation behaviour was investigated by means of a modified Sawyer Tower circuit as well as capacitance versus applied voltage measurements. The maximum polarisation obtained was 36 µC cm-2 and the critical field to induce ferroelectric state and to reverse the antiferroelectric states were 65 and 90 kV cm-1 respectively. The dielectric properties were investigated as a function of frequency and temperature. The dielectric constant of the AFE lead zirconate thin film was 190 at 100 kHz which is more than the bulk ceramic value (120) with a dissipation factor of less than 0.07. The polarisation switching kinetics of the antiferroelectric PbZrO3 thin films showed that the switching time to be around 275 ns between antipolar state to polar states.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Antiferroelectric; Lead Zirconate; Pulsed Laser Ablation
ID Code:19030
Deposited On:25 Nov 2010 14:34
Last Modified:06 Jun 2011 10:23

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